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Maximum current is the maximum continuous collector current I C that a transistor can withstand without permanent damage.

P D is the overall power the FET can dissipate through heat. So, altogether, there are six types of field-effect transistors. You can use either of the above voltages when comparing FETs. You’ll find that fewer devices need to be stocked, and turnaround time can be reduced.

a/2Sc+equivalent datasheet & applicatoin notes – Datasheet Archive

De-soldering and replacing a transistor takes very little time. Maximum Power, called P Dis the overall power a transistor can dissipate, through heat, without burning up. It’s a maximum current rating so choose a substitute with a rating at least as high as the original.

A Transistor Outline number, or TOrefers to a transistor’s physical size, shape, and mounting style. You can organize the transistors transiwtor groups of drawers, each dedicated to a particular transistor outline.


Transistor Substitution

The V EB rating isn’t usually a factor in choosing a substitute transistor. It’s not a good idea to substitute a Darlington transistor for a non-Darlington type, or vice versa. This is the only spec you can actually see.

But if the original transistor has a high gain, try to match it. The original transistor might need special ordering, or be discontinued and unavailable. Be sure to choose a substitute transistor with a maximum current rating at least as high as the original.

BV DSS – the breakdown voltage between the Drain and the Source terminals when the gate is short-circuited to the source. Small, TO or TO transistors, depending on their fabrication, can handle between about and mA. Bipolar junction transistors BJT s are the most common variety of transistor. Choose a substitute transistor with a maximum power rating at least as high datasueet the original.

The following electrical specs are important when choosing a substitute BJT.

2SC9014 Datasheet PDF – USHA

Some TO numbers are shown here:. V CB is always equal to or greater than V CE and you can use either of these maximum voltages to compare transistors. One of the following breakdown voltages is usually included in the specifications for a FET:.

The type number is often printed on the transistor, although product manufacturers sometimes have their own part numbers printed instead.

In an enhancement type device, it’s an off-state current.


For a depletion-type FET, the gate-source bias voltage might be 0 V i. Select a substitute with the same general range of values.

A datasheey transistor is a sandwich of “N” and “P” type semiconductors. If the lead arrangement of a small replacement transistor differs from that of the the original, you can sometimes bend the transistor leads across one another to route them into the correct holes in the circuit board.

During an avalanche, electrons in the P-N transition regions are accelerated to energies so high that they hit bound electrons with enough force to free them, creating additional charge carriers and greatly multiplying the transistor current. One of the following breakdown voltages is usually included in the specifications for a FET: Finding a substitute replacement transistor isn’t difficult if you know the specs of the original transistor and organize your stock by specs datashdet of type numbers.

Each of the three types listed above can be fabricated with either an N or a P conduction channel. Current gain falls off at higher frequencies, so trannsistor high-gain transistor can deliver a wider frequency response than a low-gain transiator.

This rating is used primarily with JFETs.